Shenzhen Hengstar Technology Co., Ltd.

Shenzhen Hengstar Technology Co., Ltd.

sales@angeltondal.com

86-755-89992216

Shenzhen Hengstar Technology Co., Ltd.
HomePwodwi yoEndistriyèl Smart Modil Pwodwi pou TelefònDDR3 UDIMM memwa modil espesifikasyon

DDR3 UDIMM memwa modil espesifikasyon

Kalite peman:
L/C,T/T,D/A
Incoterm:
FOB,EXW,CIF
Min. Lòd:
1 Piece/Pieces
Transpòtasyon:
Ocean,Air,Express,Land
  • Deskripsyon Product
Overview
Atribi pwodwi yo

Modèl Pa gen.NSO4GU3AB

Kapasite Pwovizyon pou & Lòt Enfòmasyo...

TranspòtasyonOcean,Air,Express,Land

Kalite pemanL/C,T/T,D/A

IncotermFOB,EXW,CIF

Anbalaj & akouchman
Vann Inite:
Piece/Pieces

4GB 1600MHz 240-PIN DDR3 UDIMM


Istwa Revizyon

Revision No.

History

Draft Date

Remark

1.0

Initial Release

Apr. 2022

 

Kòmann -nan tab enfòmasyon

Model

Density

Speed

Organization

Component Composition

NS04GU3AB

4GB

1600MHz

512Mx64bit

DDR3 256Mx8 *16


Deskripsyon
Hengstar unbuffered DDR3 SDRAM DIMMS (Unbuffered Double Done Pousantaj Synchronous Doub nan-liy modil memwa) yo se pouvwa ki ba, gwo vitès operasyon memwa modil ki sèvi ak aparèy DDR3 SDRAM. NS04GU3AB se yon 512m x 64-ti jan de ran 4GB DDR3-1600 CL11 1.5V SDRAM pwodwi DIMM unbuffered, ki baze sou sèz 256m x 8-bit konpozan FBGA. SPD a pwograme pou JEDEC estanda latansi DDR3-1600 distribisyon 11-11-11 nan 1.5V. Chak DIMM 240-PIN itilize dwèt kontak lò. Se SDRAM a unbuffered DIMM gen entansyon pou itilize kòm memwa prensipal lè enstale nan sistèm tankou PC yo ak estasyon.


Karakteristik
: Pwovizyon pou Power: VDD = 1.5V (1.425V a 1.575V)
VDDQ = 1.5V (1.425V pou 1.575v)
800MHz FCK pou 1600MB/sec/PIN
8 Bank Endepandan Entèn
: Pwopozisyon Latansi CAS: 11, 10, 9, 8, 7, 6
 Pwogramasyon aditif latansi: 0, Cl - 2, oswa CL - 1 revèy
8-ti jan pre-chache
: Longè burst: 8 (interleave san okenn limit, sekans ak adrès kòmanse "000" sèlman), 4 ak TCCD = 4 ki pa pèmèt san pwoblèm li oswa ekri [swa sou vole a lè l sèvi avèk A12 oswa MRS]
-Bi-direksyon diferans done strobe
(Entènèt (pwòp tèt ou) kalibrasyon; Entèn kalibrasyon pwòp tèt ou nan ZQ PIN (RZQ: 240 ohm ± 1%)
ou mouri revokasyon lè l sèvi avèk PIN ODT
Verage Peryòd rafrechi 7.8US nan pi ba pase TCase 85 ° C, 3.9US nan 85 ° C <TCase <95 ° C
 Reyajiste

-Fly-pa topoloji
: PCB: Wotè 1.18 "(30mm)
rohs konfòme ak halogen-gratis


Kle paramèt distribisyon

MT/s

tRCD(ns)

tRP(ns)

tRC(ns)

CL-tRCD-tRP

DDR3-1600

13.125

13.125

48.125

2011/11/11


Tab adrès

Configuration

Refresh count

Row address

Device bank address

Device configuration

Column Address

Module rank address

4GB

8K

32K A[14:0]

8 BA[2:0]

2Gb (256 Meg x 8)

1K A[9:0]

2 S#[1:0]


Deskripsyon PIN

Symbol

Type

Description

Ax

Input

Address inputs: Provide the row address  for ACTIVE commands, and the column
address and auto precharge bit (A10) for READ/WRITE commands, to select one location
out of the memory array in the respective bank. A10 sampled during a PRECHARGE
command determines whether the PRECHARGE applies to one bank (A10 LOW, bank
selected by BAx) or all banks (A10 HIGH). The address inputs also provide the op-code
during a LOAD MODE command. See the Pin Assignments table for density-specific
addressing information.

BAx

Input

Bank address inputs: Define the device bank to which an ACTIVE, READ, WRITE, or
PRECHARGE command is being applied. BA define which mode register (MR0, MR1,
MR2, or MR3) is loaded during the LOAD MODE command.

CKx,
CKx#

Input

Clock: Differential clock inputs. All control, command, and address input signals are
sampled on the crossing of the positive edge of CK and the negative edge of CK#.

CKEx

Input

Clock enable: Enables (registered HIGH) and disables (registered LOW) internal circuitry
and clocks on the DRAM.

DMx

Input

Data mask (x8 devices only): DM is an input mask signal for write data. Input data is
masked when DM is sampled HIGH, along with that input data, during a write access.
Although DM pins are input-only, DM loading is designed to match that of the DQ and DQS pins.

ODTx

Input

On-die  termination:  Enables  (registered  HIGH)  and  disables  (registered  LOW)
termination resistance internal to the DDR3 SDRAM. When enabled in normal operation,
ODT is only applied to the following pins: DQ, DQS, DQS#, DM, and CB. The ODT input will be ignored if disabled via the LOAD MODE command.

Par_In

Input

Parity input: Parity bit for Ax, RAS#, CAS#, and WE#.

RAS#,
CAS#,
WE#

Input

Command inputs: RAS#, CAS#, and WE# (along with S#) define the command being
entered.

RESET#

Input
(LVCMOS)

Reset: RESET# is an active LOW asychronous input that is connected to each DRAM and
the registering clock driver. After RESET# goes HIGH, the DRAM must be reinitialized as
though a normal power-up was executed.

Sx#

Input

Chip select: Enables (registered LOW) and disables (registered HIGH) the command
decoder.

SAx

Input

Serial address inputs: Used to configure the temperature sensor/SPD EEPROM address
range on the I2C bus.

SCL

Input

Serial
communication to and from the temperature sensor/SPD EEPROM on the I2C bus.

CBx

I/O

Check bits: Used for system error detection and correction.

DQx

I/O

Data input/output: Bidirectional data bus.

DQSx,
DQSx#

I/O

Data strobe: Differential data strobes. Output with read data; edge-aligned with read data;
input with write data; center-alig

SDA

I/O

Serial
sensor/SPD EEPROM on the I2C bus.

TDQSx,
TDQSx#

Output

Redundant data strobe (x8 devices only): TDQS is enabled/disabled via the LOAD
MODE command to the extended mode register (EMR). When TDQS is enabled, DM is
disabled and TDQS and TDQS# provide termination resistance; otherwise, TDQS# are no
function.

Err_Out#

Output (open
drain)

Parity error output: Parity error found on the command and address bus.

EVENT#

Output (open
drain)

Temperature event: The EVENT# pin is asserted by the temperature sensor when critical
temperature thresholds have been exceeded.

VDD

Supply

Power supply: 1.35V (1.283–1.45V) backward-compatible to 1.5V (1.425–1.575V). The
component VDD and VDDQ are connected to the module VDD.

VDDSPD

Supply

Temperature sensor/SPD EEPROM power supply: 3.0–3.6V.

VREFCA

Supply

Reference voltage: Control, command, and address VDD/2.

VREFDQ

Supply

Reference voltage: DQ, DM VDD/2.

VSS

Supply

Ground.

VTT

Supply

Termination voltage: Used for control, command, and address VDD/2.

NC

No connect: These pins are not connected on the module.

NF

No function: These pins are connected within the module, but provide no functionality.

Nòt : Tablo deskripsyon PIN ki anba a se yon lis konplè nan tout broch posib pou tout modil DDR3. Tout broch ki nan lis pouvwa pa dwe sipòte sou modil sa a. Gade devwa PIN pou enfòmasyon espesifik nan modil sa a.


Dyagram blòk fonksyonèl

4GB, 512MX64 Modil (2Rank nan x8)

1


2


Remak:
1. se boul la ZQ sou chak eleman DDR3 ki konekte nan yon ekstèn 240Ω ± 1% rezistans ki se mare nan tè. Yo itilize li pou kalibrasyon an nan sou-mouri revokasyon eleman an ak chofè pwodiksyon an.



Dimansyon modil


View devan

3

View devan

4

Nòt:
1.Tout dimansyon yo nan milimèt (pous); Max/min oswa tipik (tip) kote te note.
2.Tolerans sou tout dimansyon ± 0.15mm sof si otreman espesifye.
3. Dyagram nan dimansyon se pou referans sèlman.

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